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PD - 91456E
IRG4BC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3
Industry standard TO-220AB package
UltraFast Speed IGBT
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Thermal Resistance
http://doc.xuehai.net1
4/17/2000
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