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Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3-- In situ surface character

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3-- In situ surface character

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3-- In situ surface character

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al 2 O 3 : In situsurface characterization

Shankar Swaminathan, Yasuhiro Oshima, Michael A. Kelly, and Paul C. McIntyre

Citation: Applied Physics Letters 95, 032907 (2009); doi: 10.1063/1.3177195 View online: http://doc.xuehai.net/10.1063/1.3177195

View Table of Contents: http://doc.xuehai.net/content/aip/journal/apl/95/3?ver=pdfcov Published by the AIP Publishing

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