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Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

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in,gd ark crreutnp reefrbalet oredcu edrakc urrent.S all cmaapitance csir e -aswd rasictlalyr eucded a,s hsownin F i.g1. hiT suqirdewi t hrsepet to chighs peedresp nseo nad ol wpenhmonen waso ot nboersvedi n I,Gan+,s pAhtodioods aedn inimmu metdceabtl peoerw. A enitpxial laaey wirthl ocar- witwhx <.01[43] D.rakcurr net dnseiitesa re 31. xr ire denitsoybtaindei nVP isE uistbae lto emet te haobve r-e .6 x4l o' Al-cm'at 10 ad n02,V rspeetcveiy. lThees quiemernst fr olw doakrc urren atd nmasl clpacaitnce. ahTisv aleu aresc mopraableo tthoes ofa emasdi odef briacaed teltte descrirbes harccterastics oi an fnIo.s3ao.G47sA formt esamehepit axila lyera.S ncei adkrcur rnetnircasede gaian hwneS 0i 2pstutreis a plpied onthe doide sruafc,ep hoodtodei itw plaharn sructtuer amde b yVPE. te hiS2 film on0 Ino.sGa3.47Ao seems to scasue ad rak ucrGorwth porecurd eadn eletcriac plorertips oeft eh VPE rentinc ersa.ec ysrat hlaevbeen r eoptedr n deiatil[ 11, 31141. Th egrowht unPchthroug-h olvagt ewas easured to 'bm 10 Veby s styemwas H 2-HlCGa--InA-ss,Hw erh eW1 wCsa usplpedi cpaciaantcev-otale cugvreS.icenn oa brpt uadk currertnb ythe malr ecompdsoitoin fo nines 7puerA sIJ Ca 8t5°C0 .nicreaeswa ossebrved tathe pnchuth-oruhgv oltgea,interT e HC1hga se resactdew ti hnI ad namelGstat 00°8C.Th e fcaest te aensdtiya tthe itnrfeca betewenet eh.e piatiaxlM anucsriptr ceieev Jad.n 8, 11908 .layera dnt e husbtrsta ie scosnidreedto b elow .Tehautho s arr eiwt hMussaihnoEl cerical Cotmumncation Caririr eocncentatiorn, maesuerdby acpaicante cvressuCorp raotoin L,baortoar,y Nippon Telegrah pna dTleehopenP buli cvotlagecha actrresitci, sis1 3 x. 01" m-cj J.ucnitn o3-91-1,Miodrchi, Musoasino-hhs,iT kyoo,81 0Jpan. Abstract-A aunpch-trouhgh tpy planaerp ohtodoid wite lowhd akr cruentanrhighdsepdeerspnosews faaribacted rfm low coarrierde nist Iny05J.a0G4.As~ rgon wb yvaproph-se aeiptaxy D.ra kcurent dresinyt ws a.3 x1A/mcZ a 10tV b ais Ris. etmi eandf lulw ithd a hatlf aximummwe r 8e and 1 2 1 6 2sepc,r epestciely,v ata iabs aboe v4V. 190-857368010410-0055$00.0570 1 890 IEEE

Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

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