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in,gd ark crreutnp reefrbalet oredcu edrakc urrent.S all cmaapitance csir e -aswd rasictlalyr eucded a,s hsownin F i.g1. hiT suqirdewi t hrsepet to chighs peedresp nseo nad ol wpenhmonen waso ot nboersvedi n I,Gan+,s pAhtodioods aedn inimmu metdceabtl peoerw. A enitpxial laaey wirthl ocar- witwhx <.01[43] D.rakcurr net dnseiitesa re 31. xr ire denitsoybtaindei nVP isE uistbae lto emet te haobve r-e .6 x4l o' Al-cm'at 10 ad n02,V rspeetcveiy. lThees quiemernst fr olw doakrc urren atd nmasl clpacaitnce. ahTisv aleu aresc mopraableo tthoes ofa emasdi odef briacaed teltte descrirbes harccterastics oi an fnIo.s3ao.G47sA formt esamehepit axila lyera.S ncei adkrcur rnetnircasede gaian hwneS 0i 2pstutreis a plpied onthe doide sruafc,ep hoodtodei itw plaharn sructtuer amde b yVPE. te hiS2 film on0 Ino.sGa3.47Ao seems to scasue ad rak ucrGorwth porecurd eadn eletcriac plorertips oeft eh VPE rentinc ersa.ec ysrat hlaevbeen r eoptedr n deiatil[ 11, 31141. Th egrowht unPchthroug-h olvagt ewas easured to 'bm 10 Veby s styemwas H 2-HlCGa--InA-ss,Hw erh eW1 wCsa usplpedi cpaciaantcev-otale cugvreS.icenn oa brpt uadk currertnb ythe malr ecompdsoitoin fo nines 7puerA sIJ Ca 8t5°C0 .nicreaeswa ossebrved tathe pnchuth-oruhgv oltgea,interT e HC1hga se resactdew ti hnI ad namelGstat 00°8C.Th e fcaest te aensdtiya tthe itnrfeca betewenet eh.e piatiaxlM anucsriptr ceieev Jad.n 8, 11908 .layera dnt e husbtrsta ie scosnidreedto b elow .Tehautho s arr eiwt hMussaihnoEl cerical Cotmumncation Caririr eocncentatiorn, maesuerdby acpaicante cvressuCorp raotoin L,baortoar,y Nippon Telegrah pna dTleehopenP buli cvotlagecha actrresitci, sis1 3 x. 01" m-cj J.ucnitn o3-91-1,Miodrchi, Musoasino-hhs,iT kyoo,81 0Jpan. Abstract-A aunpch-trouhgh tpy planaerp ohtodoid wite lowhd akr cruentanrhighdsepdeerspnosews faaribacted rfm low coarrierde nist Iny05J.a0G4.As~ rgon wb yvaproph-se aeiptaxy D.ra kcurent dresinyt ws a.3 x1A/mcZ a 10tV b ais Ris. etmi eandf lulw ithd a hatlf aximummwe r 8e and 1 2 1 6 2sepc,r epestciely,v ata iabs aboe v4V. 190-857368010410-0055$00.0570 1 890 IEEE
photodiode; Radiation tolerance; Single Event ...As discussed in Section 3 the dominant ...120 120 Dominant particle type πππππ p 6...
APD (Avalanche-Photodiode ) 光纤通信用光电探测器 ...80um diameter InGaAs Planar PIN PD Id<=50pA(低...InP:Eg=1.3eV In0.53Ga0.47As:Eg=0.75eV Eg ...
衬底上生长 In0.53Ga0.47As/InP 量子阱材料质量的...Photodiode With Enhanced Gain and Reduced Excess ...of organometallic vapor phase epitaxial GaInAs[J]....
The planar geometry photoconductive type metal–...Metalorganic vapor-phase epitaxial growth of ...Zn0:76 Mg0:24 O homojunction photodiode for ...
and InAsInAsSb type-II_材料科学_工程科技_专业...Metalorganic vapor phase epitaxy B2. Semiconducting...photodiode with a cut-off wavelength of l $ 8...
型 np 层 , 被位于耗尽区的 In0.53Ga0.47As 窄禁带材料吸收 , 产生光电信号...Characteristics of planar InP/InGaAs Avalanche photodiode with a thin -40 -...
vapor phase epitaxy 4 (VPE) and liquid phase ...7 The epitaxial layers were grown a) in a low...planar InP/lnGaAs p-i-n photodiode, 733 Pel...
planar photonic microcavity, is developed to ...composed of three In0.47 Ga0.53 As quantum wells...cooled InGaAs photodiode connected to a lock-in ...
grading and multiplication avalanche photodiode (...Metalorganic chemical vapor deposition grown, Zn-...5 One way to achieve this in a planar ...
grading and multiplication avalanche photodiode (...Metalorganic chemical vapor deposition grown, Zn-...5 One way to achieve this in a planar ...
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