irdetectorvariety[1]

红外辐射技术被广泛应用于不同的技术和科学领域,包括光谱,光通信,以及其他测量应用。随着光电子技术的进步,现在已有各种红外探测器能够满足大范围的应用需求。

Technological Advances Lead to a Greater Variety of Infrared DetectorsBy Pedro Meledina, Applications Engineer

Hamamatsu Corporation, Bridgewater, NJ 08807

Infrared radiation is widely used in diverse technicaland scientific fields including spectroscopy, opticalcommunications, and other measurementapplications. Through advances in photonicstechnology, a wide variety of infrared detectors arenow available in order to meet a large range ofapplication needs.

Infrared detectors are classified into two categories –thermal models and quantum models. A thermaldetector uses the energy of the infrared beam as heat,while the quantum detector offers a higher detection.Advances in research to better detect this part of thehigher spectrum have lead to the development ofmore advanced detectors, including InGaAsphotodiodes, PbS & PbSe photoconductivedetectors, pyroelectric detectors, and hybriddetectors. While all of these devices are excellent atlight detection, each is better suited for certainapplications than others.

InGaAs PIN Photodiodes

Designed to have small terminal capacitance andlarge shunt resistance, InGaAS PIN photodiodes arecategorized as having high-speed response and lownoise. InGaAs PIN photodiodes have many types ofactive areas and can be divided into six categories:High-performance NIR Detectors with Low Noise— These standard type InGaAs-PIN Photodiodeshave a spectral response of 0.9 to 1.7um, and areavailable in 7 active areas ranging in diameter from0.04mm up to 5mm.

Long-wavelength Enhanced Type InGaAs PINPhotodiodes — These devices ensure spectralresponse extending to the long wavelength http://doc.xuehai.netpared to standard type detectors with a cutoffwavelength of 1.7 um, these devices offer longercutoff wavelengths of 1.9 um, 2.1 um and 2.6 um,allowing for optimal selection. Thermoelectricallycooled devices are also available.

Short-wavelength Enhanced Type InGaAs PINPhotodiodes — Compared to standard type devices,this type of device provides enhanced sensitivity in

the short wavelength range from 0.7 to 0.9 um.(0.25A/W at =0.78 um).

InGaAs PIN Photodiode with Pre-amp — Thesemodules incorporate an InGaAs PIN photodiode andtransimpedance amplifier into a TO-18 package.They are applicable for large-capacity, long-distanceoptical communications and other near-infrareddetection.

InGaAs Linear Image Sensors — Incorporating anInGaAs photodiode array chip, a thermoelectric-cooler and C-MOS multiplexers with chargeintegration amplifiers, the InGaAs linear imagesensors (Photo 1) are self-scanning photodiode

arrays designed specifically for detectors in near-infrared multichannel spectroscopy. Somespectrophotometers feature InGaAs detection forsimultaneous, rapid and precise spectral acquisitionover the 0.9 micrometers to 1.7-micrometer or 1.2to 2.6 micrometer wavelength range with a 1-nmbandwidth. Sampling is available for transmission,absorption and reflection measurements.

Complete models feature LabView®-based softwarefor instrument control, quantitative analysis, andtimed acquisition. Advanced systems even have anintelligent electronic design that allowsunconventional readout modes. This technology haslow noise, precision analog design, and a readoutfrequency of 1MHz Max.

Self-scanning photodiode arrays for detectors in nearinfrared multichannel spectroscopy are alsoavailable. Such an array incorporates an InGaAs

photodiode array chip, shift resister with C-MOS

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