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SIGC12T120

IGBT Chip
FEATURES:
1200V Trench & Field Stop technology low turn-off losses short tail current
positive temperature coefficient easy paralleling
This chip is used for: power module Applications: drives

Chip Type
SIGC12T120
VCE 1200V
ICn 8A
Die Size 3.54 x 3.5 mm2
Package sawn on foil
Ordering Code Q67050-A4102-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position
Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond
Reject Ink Dot Size
Recommended Storage Environment
3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 12.4 / 6.9 140 150 0
1200 pcs Photoimide 3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm 0.65mm ; max 1.2mm
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
mm µm mm grd
2
mm
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Q67050A4048-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible ...
Q67050-A4167-A001中文资料 隐藏>> 元器件交易网www.cecb2b.com Preliminary ...Unit ns A 21.5 970 nC 1770 A / ?s 4.4 1 5 Edited by INFINEON ...
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